收藏本站
MMDF2P02E
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) (N ote 3)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
25
?
?
?
?
?
2.2
?
?
?
?
?
1.0
10
100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 2.0 Adc)
(V GS = 4.5 Vdc, I D = 1.0 Adc)
Forward Transconductance (V DS = 3.0 Vdc, I D = 1.0 Adc)
V GS(th)
R DS(on)
g FS
1.0
?
?
?
1.0
2.0
3.8
0.19
0.3
2.8
3.0
?
0.25
0.4
?
Vdc
W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
340
475
pF
Output Capacitance
Transfer Capacitance
(V DS = 16 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
220
75
300
150
SWITCHING CHARACTERISTICS (Note 5)
Turn ? On Delay Time
t d(on)
?
20
40
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 10 Vdc, I D = 2.0 Adc,
V GS = 5.0 Vdc, R G = 6.0 W )
(V DD = 10 Vdc, I D = 2.0 Adc,
V GS = 10 Vdc, R G = 6.0 W )
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
40
53
41
13
29
30
28
80
106
82
26
58
60
56
Gate Charge
(V DS = 16 Vdc, I D = 2.0 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
Q 3
?
?
?
?
10
1.0
3.5
3.0
15
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 4)
Reverse Recovery Time
See Figure 11
Reverse Recovery Storage Charge
(I S = 2.0 Adc, V GS = 0 Vdc)
(I S = 2.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
1.5
32
19
12
0.035
2.0
64
?
?
?
Vdc
ns
m C
3. Negative sign for P ? Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MMDF2P02HDR2G MOSFET P-CH DUAL 3.3A 20V 8SOIC
MMDF3N02HDR2G MOSFET PWR P-CH 20V 3.8A 8-SOIC
MMDF3N04HDR2G MOSFET N-CH DUAL 3.4A 40V 8SOIC
MMDFS6N303R2 MOSFET N-CH 30V 6A 8-SOIC
MMFT5P03HDT1 MOSFET P-CH 30V 3.7A SOT223
MMFT960T1 MOSFET N-CH 60V 300MA SOT223
MMG3002NT1 IC AMP RF GP 3600MHZ 5.2V SOT-89
MMG3006NT1 TRANS GPA 33DBM 16-QFN
相关代理商/技术参数
MMDF2P02ER2G-ND 制造商:ON Semiconductor 功能描述:
MMDF2P02HD 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 20 Volts P−Channel SO−8, Dual
MMDF2P02HDR2 功能描述:MOSFET 20V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MMDF2P02HDR2G 功能描述:MOSFET PFET SO8D 20V 3.3A 160mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MMDF2P03HD 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 30 Volts Pa??Channel SOa??8, Dual
MMDF2P03HDR2 制造商:ON Semiconductor 功能描述:
MMDF3200Z 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS
MMDF3207 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS